Steven M Kraft

US Patent:

20230059396, Feb 23, 2023

Filed:

Oct 24, 2022

Appl. No.:

17/972509

Inventors:

- Aurora IL, US
Steven KRAFT - Plainfield IL, US
Roman A. IVANOV - Aurora IL, US
Steven GRUMBINE - Aurora IL, US
Andrew R. WOLFF - Fruita CO, US

International Classification:

C09G 1/02
H01L 21/321

Abstract:

A chemical mechanical polishing composition for polishing a substrate having a cobalt layer includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including a cobalt layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the cobalt layer from the substrate and thereby polish the substrate.

US Patent:

20210115298, Apr 22, 2021

Filed:

Oct 22, 2020

Appl. No.:

17/077070

Inventors:

- Aurora IL, US
Steven KRAFT - Elgin IL, US
Fernando HUNG LOW - Naperville IL, US
Benjamin PETRO - St. Charles IL, US
Na ZHANG - Naperville IL, US
Julianne TRUFFA - New Lenox IL, US

International Classification:

C09G 1/02
C09G 1/16
C01F 17/229
C01F 17/235

Abstract:

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of greater than about 6 meq/g.

US Patent:

20210115299, Apr 22, 2021

Filed:

Oct 22, 2020

Appl. No.:

17/077155

Inventors:

- Aurora IL, US
Steven KRAFT - Elgin IL, US
Fernando HUNG LOW - Naperville IL, US
Benjamin PETRO - St. Charles IL, US
Na ZHANG - Naperville IL, US
Julianne TRUFFA - New Lenox IL, US

International Classification:

C09G 1/02
C09K 3/14
B24B 37/04

Abstract:

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material comprises, consists of, or consists essentially of a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and a cationic polymer having a charge density of less than about 6 meq/g.

US Patent:

20210115302, Apr 22, 2021

Filed:

Oct 22, 2020

Appl. No.:

17/077485

Inventors:

- Aurora IL, US
Alexander W. HAINS - Aurora IL, US
Sarah BROSNAN - St. Charles IL, US
Steven KRAFT - Elgin IL, US

International Classification:

C09G 1/02
C09G 1/16

Abstract:

A chemical mechanical polishing composition for polishing a substrate having a silicon oxygen material includes a liquid carrier, cubiform ceria abrasive particles dispersed in the liquid carrier, and at least one of an anionic compound and a nonionic compound.

US Patent:

20200172759, Jun 4, 2020

Filed:

Dec 4, 2018

Appl. No.:

16/208703

Inventors:

- Aurora IL, US
Steven Kraft - Plainfield IL, US
Roman A. Inanov - Aurora IL, US
Steven Grumbine - Aurora IL, US
Andrew R. Wolff - Fruita CO, US

International Classification:

C09G 1/02
H01L 21/321

Abstract:

A chemical mechanical polishing composition for polishing a substrate having a cobalt layer includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including a cobalt layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the cobalt layer from the substrate and thereby polish the substrate.

US Patent:

20200172761, Jun 4, 2020

Filed:

Dec 4, 2018

Appl. No.:

16/208779

Inventors:

- Aurora IL, US
Steven KRAFT - Plainfield IL, US
Roman A. IVANOV - Aurora IL, US

International Classification:

C09G 1/02
H01L 21/3105

Abstract:

The invention provides a chemical-mechanical polishing composition for polishing a silicon nitride containing substrate. The composition includes an aqueous carrier; cationic silica particles dispersed in the aqueous carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV in the polishing composition; a polishing additive selected from the group consisting of a polyether amine, a polysilamine, a polyvinylimidazole, and a combination thereof, wherein the polyether amine and the polysilamine have corresponding weight average molecular weights of about 1,000 g/mol or less. The composition has a pH of greater than about 6. A method for polishing a silicon nitride containing substrate is also provided.

US Patent:

20170194160, Jul 6, 2017

Filed:

Jan 6, 2017

Appl. No.:

15/399810

Inventors:

- Aurora IL, US
Renhe JIA - Naperville IL, US
Steven KRAFT - Naperville IL, US
Phillip W. CARTER - Round Lake IL, US

International Classification:

H01L 21/3105
C09K 3/14
C09G 1/02

Abstract:

Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing a low-k dielectric composition, which includes less than about 80% by weight of carbon, with a polishing pad and a chemical-mechanical polishing composition comprising water and abrasive particles having a positive surface charge, wherein the polishing composition has a pH of from about 3 to about 6; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the low-k dielectric composition is carbon-doped silicon oxide.

US Patent:

20170044403, Feb 16, 2017

Filed:

Oct 31, 2016

Appl. No.:

15/338724

Inventors:

- Aurora IL, US
Dana SAUTER VAN NESS - Forest Park IL, US
Viet LAM - Naperville IL, US
Alexander HAINS - Aurora IL, US
Steven KRAFT - Plainfield IL, US
Renhe JIA - Naperville IL, US

International Classification:

C09G 1/02
B24B 37/04
H01L 21/3105
C09K 3/14
B24B 37/20

Abstract:

The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.