Susan M Sanchez

US Patent:

48265640, May 2, 1989

Filed:

Oct 30, 1987

Appl. No.:

7/115140

Inventors:

Brian H. Desilets - Wappingers Falls NY
Richard D. Kaplan - Wappingers Falls NY
Harbans S. Sachdev - Wappingers Falls NY
Krishna G. Sachdev - Wappingers Falls NY
Susan A. Sanchez - Glenham NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B05D 306

US Classification:

156643

Abstract:

A method of image transfer transfer into a substrate by reactive ion etch technique is provided. A mask layer on said substrate is formed by a spin-on film which film is comprised of a mixed organo-functional zircoaluminate or zircotitanate material. The film is dried and cured, and thereafter coated with a radiation sensitive resist. The reist is imagewise exposed and developed, which developing preferably also removes the pattern in the mask exposing the substrate. The substrate is then reactive ion etched, the remaining film acting as a barrier material to the etching.