Thomas Chung

US Patent:

7326929, Feb 5, 2008

Filed:

Feb 6, 2006

Appl. No.:

11/348029

Inventors:

Mau-Song Chou - Rancho Palos Verdes CA, US
Jonathan W. Arenberg - Santa Monica CA, US
Mark A. Menard - Chino Hills CA, US
Thomas T. Chung - Redondo Beach CA, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

G02F 1/01

US Classification:

250330

Abstract:

A technique for providing high-contrast images of defects in semiconductor devices and arrays of such devices, by illuminating each semiconductor device under inspection with broadband infrared radiation, and then forming an image of radiation that is specularly reflected from the semiconductor device. Many semiconductor devices and arrays of such devices have a metal backing layer that specularly reflects the illumination back into an appropriately positioned and aligned camera, selected to be sensitive to infrared wavelengths at which the semiconductor device materials are relatively transparent.

US Patent:

7476606, Jan 13, 2009

Filed:

Mar 28, 2006

Appl. No.:

11/390772

Inventors:

Dean Tran - Westminster CA, US
Alan Hirschberg - Thousand Oak CA, US
Ha K. DeMarco - Redondo Beach CA, US
Luis Rochin - Temecula CA, US
Thomas Chung - Redondo Beach CA, US
Mark Kintis - Manhattan Beach CA, US
Steven J. Mass - La Palma CA, US

Assignee:

Northrop Grumman Corporation - Los Angeles CA

International Classification:

H01L 21/00
H01L 21/28

US Classification:

438605, 438 25, 438604

Abstract:

Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

US Patent:

7994524, Aug 9, 2011

Filed:

Sep 12, 2007

Appl. No.:

11/900576

Inventors:

David Yaunien Chung - Los Angeles CA, US
Thomas Taoming Chung - Redondo Beach CA, US

International Classification:

H01L 33/48

US Classification:

257 90, 257 88, 257100, 257E33058, 257E2502, 257E25021

Abstract:

A vertical structured Light Emitting Diode (LED) array using wafer level bonding. The process bonds two or more LED arrays vertically to produce light mixing in a small footprint. The vertically bonded LED array contains through substrate vias and a plurality of metal posts coated with solder to form an internal cavity between the LED layers. This LED array structure is intrinsically hermetically sealed.

US Patent:

20070184285, Aug 9, 2007

Filed:

Feb 8, 2006

Appl. No.:

11/349609

Inventors:

Dean Tran - Westminster CA, US
Thomas Chung - Redondo Beach CA, US
Alan Hirschberg - Thousand Oaks CA, US
Luis Rochin - Temecula CA, US
Mark Kintis - Manhattan Beach CA, US

International Classification:

B32B 17/06
B32B 15/00

US Classification:

428432000

Abstract:

Protection against x-ray radiation is provided by a thin layer of a zinc-based alloy. An electronics component housing and lid are made to include a base of a lightweight alloy, a thin coating of the zinc-based alloy and an exterior finish metal layer. The zinc-based alloy provides excellent radiation protection and other advantages, without a significant weight penalty.