Thomas A Nguyen

US Patent:

7479458, Jan 20, 2009

Filed:

Dec 15, 2005

Appl. No.:

11/305369

Inventors:

Guang-Yaw Hwang - Hsin-Shi, TW
Thomas Nguyen - Fremont CA, US
Timothy Tran - Fremont CA, US
Yu-Wei Yang - Hsin-Shi, TW

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/302

US Classification:

438714, 438725, 438740, 216 67

Abstract:

A method for etching a barrier material on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system, wherein the substrate includes the barrier material and a low-k material, and wherein the barrier material and a low-k material are configured to be exposed to a plasma. The method also includes flowing an etchant gas mixture, including CHF from about 4% to about 8% of a plasma gas flow, into the plasma processing chamber, wherein the etchant gas mixture is configured to etch the barrier material at a first etch rate, the etchant gas mixture is configured to etch the low-k material at a second etch rate, wherein the first etch rate is substantially greater than the second etch rate. The method further includes striking a plasma from the etchant source gas; and etching the barrier layer and the low-k layer.

US Patent:

7696836, Apr 13, 2010

Filed:

Oct 30, 2007

Appl. No.:

11/929679

Inventors:

Thomas Nguyen - Fremont CA, US
Jerry Martinson - San Jose CA, US

Assignee:

Aruba Networks, Inc. - Sunnyvale CA

International Classification:

H01P 5/00
H03H 7/00

US Classification:

333 24R, 333177

Abstract:

Improved coupler for Ethernet over twisted pair. An improved coupler has a first common mode choke for connecting an Ethernet PHY to the primary winding of a transformer. The secondary winding of the transformer connects through a second common mode choke for connection to a twisted pair line. In one embodiment, the first common mode choke, transformer, and second common mode choke are placed in the same package. In a second environment, a plurality of choke-transformer-choke units are placed in the same package. In a third embodiment, the plurality of choke-transformer-choke units may be integrated into a connector. Pairs of the second common mode chokes may share cores.

US Patent:

D627345, Nov 16, 2010

Filed:

Jan 29, 2009

Appl. No.:

29/331667

Inventors:

Gururaj Govindasamy - San Ramon CA, US
Jonathan Burke - Berkeley CA, US
Kenneth Mak - San Francisco CA, US
Thomas Nguyen - Fremont CA, US

Assignee:

Aruba Networks, Inc. - Sunnyvale CA

International Classification:

1402

US Classification:

D14356, D14240

US Patent:

D656937, Apr 3, 2012

Filed:

Dec 17, 2010

Appl. No.:

29/381355

Inventors:

Gururaj Govindasamy - San Ramon CA, US
Thomas Nguyen - Fremont CA, US
Hogan Lew - Sunnyvale CA, US
Onno Harms - San Jose CA, US
Nicholas F. Talesfore - Campbell CA, US
Joseph McArdle - Cupertino CA, US

Assignee:

Aruba Networks, Inc. - Sunnyvale CA

International Classification:

1402

US Classification:

D14358

US Patent:

D660839, May 29, 2012

Filed:

Dec 17, 2010

Appl. No.:

29/381355

Inventors:

Gururaj Govindasamy - San Ramon CA, US
Thomas Nguyen - Fremont CA, US
Hogan Lew - Sunnyvale CA, US
Onno Harms - San Jose CA, US
Nicholas F. Talesfore - Campbell CA, US
Joseph McArdle - Cupertino CA, US

Assignee:

Aruba Networks, Inc. - Sunnyvale CA

International Classification:

1402

US Classification:

D14358

US Patent:

20030188860, Oct 9, 2003

Filed:

Apr 4, 2002

Appl. No.:

10/116772

Inventors:

Patrick Zimmerman - Houston TX, US
Rocky Turley - Houston TX, US
William Eldridge - Cypress TX, US
Michael Ritter - Conroe TX, US
Gary Ingram - Richmond TX, US
Thomas Nguyen - Houston TX, US

Assignee:

Weatherford/Lamb, Inc.

International Classification:

E21B023/06

US Classification:

166/181000, 166/123000

Abstract:

A releasing mechanism for releasing a hydraulically actuated setting tool from a downhole tool is provided. Preferably, the downhole tool to be released is a wellbore sealing tool such as a bridge plug, packer or inflatable packer. The releasing mechanism comprises an adapter having a body, a connector above the body connected to the setting tool, and a lower portion. The releasing mechanism further comprises a releasable connection which releasably connects the lower portion of the adapter to a mandrel within the bridge plug or other sealing tool. In one embodiment, the releasable connection defines a frangible body disposed within the plane of the circumferential bore of the bridge plug mandrel. In another arrangement, the releasable connection defines both a frangible body and threaded collet fingers which releasably engage matching threads on the outer surface of the mandrel of the bridge plug or other wellbore sealing tool.

US Patent:

20120155015, Jun 21, 2012

Filed:

Dec 17, 2010

Appl. No.:

12/971962

Inventors:

Gururaj Govindasamy - San Ramon CA, US
Thomas Nguyen - Fremont CA, US
Hogan Lew - Sunnyvale CA, US
David Fraticelli - Fremont CA, US

International Classification:

G06F 1/20
H05K 7/20

US Classification:

36167946, 361688, 361714

Abstract:

According to one embodiment of the invention, an apparatus comprises a heat dissipation unit, such as a heat sink, that encases wireless logic in order to completely surround such logic. When adapted as a wireless network device, a casing further encases the heat dissipation unit. The casing includes a plurality of slots that are aligned with heat-radiating elements positioned around the periphery of the heat dissipation unit to allow for cooling by convection.

US Patent:

6090304, Jul 18, 2000

Filed:

Aug 28, 1997

Appl. No.:

8/919659

Inventors:

Helen H. Zhu - Milpitas CA
George A. Mueller - San Jose CA
Thomas D. Nguyen - Campbell CA
Lumin Li - Santa Clara CA

Assignee:

LAM Research Corporation - Fremont CA

International Classification:

C03C 1500

US Classification:

216 79

Abstract:

Disclosed is a method for improving the selectivity of dielectric layers to photoresist layers and base layers. The method is performed in a plasma processing chamber, and the photoresist layer is coated over the dielectric layer. The method includes introducing an etchant source gas into the plasma processing chamber, which consists essentially of a CxFy gas and an N. sub. 2 gas. The method further includes striking a plasma in the plasma processing chamber from the etchant source gas. The method additionally includes etching at least a portion of the dielectric layer with the plasma through to a base layer that underlies the dielectric layer. The method is also well suited for anisotropically etching an oxide layer with very high selectivities to Si, Si. sub. 3 N. sub. 4, TiN, and metal silicides.

Address:

7619 Evergreen Brk Way, Houston, TX 77095

VIN:

1HGCM56757A082381

Make:

HONDA

Model:

ACCORD

Year:

2007

Address:

1114 Beaver Bnd Rd, Houston, TX 77088

VIN:

5FNYF28167B042128

Make:

Honda

Model:

Pilot

Year:

2007

Address:

2410 Crooked Ln, Houston, TX 77084

VIN:

5TETX22N17Z397595

Make:

TOYOTA

Model:

TACOMA

Year:

2007