Tzu Wei Huang

US Patent:

6952053, Oct 4, 2005

Filed:

Oct 31, 2002

Appl. No.:

10/284350

Inventors:

Tzu Hsin Huang - San Jose CA, US
Liming Tsau - Irvine CA, US
Vincent Chen - Newport Coast CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

H01L023/48

US Classification:

257762, 29843, 257773, 257774, 257775, 257781, 257784, 257786

Abstract:

The present invention is a metal bond pad that provides electrical and mechanical connection to an integrated circuit (IC). The metal bond pad is configured to accommodate for probe travel during probing measurements, without modifying the size of the passivation opening of the bond pad. This enables higher density of active devices on the IC and therefore increases integration and lowers IC cost. The metal bond pad for the integrated circuit includes a substrate, a first metal layer, and a second metal layer. The substrate has the first metal layer disposed therein, having an opening from the top surface of the substrate. The second metal layer has a first-end portion, a second-end portion and a center portion disposed between the first-end portion and the second-end portion. The center portion of the second metal layer is aligned with the opening in the substrate and a bottom surface of the center portion is in contact with the top surface of the first metal layer. A top surface of the center portion has a recessed region that forms a first edge with said first-end portion and a second edge with said second-end portion.

US Patent:

20060022225, Feb 2, 2006

Filed:

Sep 28, 2005

Appl. No.:

11/236793

Inventors:

Tzu Huang - San Jose CA, US
Liming Tsau - Irvine CA, US
Vincent Chen - Newport Coast CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

H01L 27/148

US Classification:

257232000

Abstract:

The present invention is a metal bond pad that provides electrical and mechanical connection to an integrated circuit (IC). The metal bond pad is configured to accommodate for probe travel during probing measurements, without modifying the size of the passivation opening of the bond pad. This enables higher density of active devices on the IC and therefore increases integration and lowers IC cost. The metal bond pad for the integrated circuit includes a substrate, a first metal layer, and a second metal layer. The substrate has the first metal layer disposed therein, having an opening from the top surface of the substrate. The second metal layer has a first-end portion, a second-end portion and a center portion disposed between the first-end portion and the second-end portion. The center portion of the second metal layer is aligned with the opening in the substrate and a bottom surface of the center portion is in contact with the top surface of the first metal layer. A top surface of the center portion has a recessed region that forms a first edge with said first-end portion and a second edge with said second-end portion. The first-end portion of the second metal layer is disposed on the top surface of the substrate and extends from the first edge of the recessed region. It has a length defined from the first edge of the opening. The second-end portion is also disposed on the top surface of the substrate and extends from the second edge of the recessed region. It has a length defined from the second edge of the recessed region, and it is longer than the length of the first-portion.