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Vinh Thiem Diep

age ~70

from San Francisco, CA

Also known as:
  • Vinh T Diep
  • Vinh T Deip
Phone and address:
1126 S Van Ness Ave APT 4, San Francisco, CA 94110

Vinh Diep Phones & Addresses

  • 1126 S Van Ness Ave APT 4, San Francisco, CA 94110
  • 1126 Van Ness Ave, San Francisco, CA 94110

Us Patents

  • Foldable Case For Use With An Electronic Device

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  • US Patent:
    20110163642, Jul 7, 2011
  • Filed:
    Jan 6, 2010
  • Appl. No.:
    12/683328
  • Inventors:
    Matthew D. Rohrbach - San Francisco CA, US
    Vinh Diep - Milpitas CA, US
  • Assignee:
    Apple Inc. - Cupertino CA
  • International Classification:
    A47B 81/00
    B23P 11/00
  • US Classification:
    3122231, 29428
  • Abstract:
    This is directed to a case for securing and protecting an electronic device. The case can include a cover connected to a pouch by a hinge such that the cover can be overlaid over a device interface (e.g., a device display). The case can be constructed by layering and combining several types of materials, including for example materials having resistant outer surfaces, materials limiting the deformation of the case, materials providing a soft surface to be placed in contact with the device, and rigid materials for defining a structure of the case. In some embodiments, the case can include a tab that allows a user to fold open the cover of the case to form a triangular prism. The prism can be placed on any of its surfaces such that the device can be oriented towards a user at particular angles (e.g., a typing-specific orientation and a media playback orientation).
  • Electronic Device Enclosures And Heatsink Structures With Thermal Management Features

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  • US Patent:
    20130050943, Feb 28, 2013
  • Filed:
    Aug 30, 2011
  • Appl. No.:
    13/221796
  • Inventors:
    Vinh Diep - Palo Alto CA, US
    Chiew-Siang Goh - San Jose CA, US
    Doug Heirich - Palo Alto CA, US
    Alexander Michael Kwan - Los Altos Hills CA, US
  • International Classification:
    H05K 7/20
  • US Classification:
    361702
  • Abstract:
    An electronic device may have a housing in which electronic components are mounted. The electronic components may be mounted to a substrate such as a printed circuit board. A heat sink structure may dissipate heat generated by the electronic components. The housing may have a housing wall that is separated from the heat sink structure by an air gap. The housing wall may have integral support structures. Each of the support structures may have an inwardly protruding portion that protrudes through a corresponding opening in the heat sink structure. The protruding portions may each have a longitudinal axis and a cylindrical cavity that lies along the longitudinal axis. Each of the support structures may have fins that extend radially outward from the longitudinal axis.
  • Electronic Device Enclosures With Engagement Features

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  • US Patent:
    20130050945, Feb 28, 2013
  • Filed:
    Aug 31, 2011
  • Appl. No.:
    13/223030
  • Inventors:
    Vinh Diep - Palo Alto CA, US
    Dominic Dolci - Berkeley CA, US
    Chiew-Siang Goh - San Jose CA, US
    Alexander Michael Kwan - Los Altos Hills CA, US
    Cesar Lozano Villarreal - Sunnyvale CA, US
  • International Classification:
    H05K 5/00
    H05K 5/02
    A47B 87/00
    H05K 7/20
  • US Classification:
    361704, 361807, 361752, 312111
  • Abstract:
    An electronic device may have electronic device housing structures in which electronic components such as integrated circuits and connectors may be mounted. The electronic device housing structures may include an upper housing having a planar upper surface member and four perpendicular housing sidewall structures. The housing sidewall structures of the upper housing may have edges that form a rectangular opening with curved corners. A lower housing may have structures forming a rectangular lip that is configured to be received within the rectangular opening in the upper housing. Engagement structures such as inwardly protruding hook structures on the upper housing and snap structures on the rectangular lip may be used in attaching the upper and lower housings. The snap structures may each have a rectangular main opening and lateral extension portions that extend the width of the main opening along the edge of the lip.
  • Heat Sinking And Electromagnetic Shielding Structures

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  • US Patent:
    20140078677, Mar 20, 2014
  • Filed:
    Sep 20, 2012
  • Appl. No.:
    13/623436
  • Inventors:
    Dominic E. Dolci - Berkeley CA, US
    James G. Smeenge - Los Gatos CA, US
    Vinh H. Diep - Palo Alto CA, US
    Chiew-Siang Goh - San Jose CA, US
  • International Classification:
    H05K 7/20
    H05K 9/00
  • US Classification:
    361719, 361704, 361718, 361720
  • Abstract:
    An electronic device may be provided with electronic components such as radio-frequency transceiver integrated circuits and other integrated circuits that are be sensitive to electromagnetic interference. Metal structures are configured to serve both as heat sinking structures for the electrical components and electromagnetic interference shielding. Components are mounted to the substrate using solder. Metal fence structures are also soldered to the substrate. Each metal fence has an opening that covers a respective one of the components. A thermally conductive elastomeric gap filler pad is mounted in the opening. A metal heat spreading structure is electrically shorted to the fence using a conductive gasket that surrounds the gap filler pad so that the structure serves as an electromagnetic interference shield. Heat from the component travels through the gap filler pad to the metal heat spreading structure so that the heat spreading structure may laterally spread and dissipate the heat.
  • Detrapping Electrons To Prevent Quick Charge Loss During Program Verify Operations In A Memory Device

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  • US Patent:
    20220199175, Jun 23, 2022
  • Filed:
    Mar 2, 2021
  • Appl. No.:
    17/249433
  • Inventors:
    - Boise ID, US
    Vinh Q. Diep - Hayward CA, US
    Zhengyi Zhang - San Jose CA, US
    Yingda Dong - Los Altos CA, US
  • International Classification:
    G11C 16/34
    G11C 16/30
    G11C 16/10
    G11C 16/08
  • Abstract:
    Processing logic in a memory device initiates a program operation on a memory array, the program operation comprising a program phase and a program verify phase. The processing logic further causes a negative voltage signal to be applied to a first selected word line of a block of the memory array during the program verify phase of the program operation, wherein the first selected word line is coupled to a corresponding first memory cell of a first plurality of memory cells in a string of memory cells in the block, wherein the first selected word line is associated with the program operation.
  • Detrapping Electrons To Prevent Quick Charge Loss During Program Verify Operations In A Memory Device

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  • US Patent:
    20230044240, Feb 9, 2023
  • Filed:
    Oct 20, 2022
  • Appl. No.:
    17/970459
  • Inventors:
    - Boise ID, US
    Vinh Q. Diep - Hayward CA, US
    Zhengyi Zhang - San Jose CA, US
    Yingda Dong - Los Altos CA, US
  • International Classification:
    G11C 16/34
    G11C 16/08
    G11C 16/10
    G11C 16/30
  • Abstract:
    Processing logic in a memory device initiates a program operation on a memory array, the program operation comprising a program phase and a program verify phase. The processing logic further causes a negative voltage signal to be applied to a first selected word line of a block of the memory array during the program verify phase of the program operation, wherein the first selected word line is coupled to a corresponding first memory cell of a first plurality of memory cells in a string of memory cells in the block, wherein the first selected word line is associated with the program operation.
  • Multi-Pass Programming Process For Memory Device Which Omits Verify Test In First Program Pass

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  • US Patent:
    20200312414, Oct 1, 2020
  • Filed:
    Jun 12, 2020
  • Appl. No.:
    16/900015
  • Inventors:
    - Addison TX, US
    Ching-Huang Lu - Fremont CA, US
    Vinh Diep - San Jose CA, US
    Yingda Dong - Los Altos CA, US
  • Assignee:
    SanDisk Technologies LLC - Addison TX
  • International Classification:
    G11C 16/34
    G11C 16/26
    G11C 16/24
    G11C 16/10
    G11C 11/56
  • Abstract:
    Techniques are provided to reduce neighbor word line interference and charge loss in a multi-pass program operation. In one implementation, the first pass of a multi-pass program operation uses one or more program pulses without performing associated verify tests. The memory cells may be programmed to different intermediate threshold voltage (Vth) distributions in the first program pass. Different bit line voltages can be used to obtain the different intermediate Vth distributions when the single program pulse is applied. In other cases, multiple program pulses are applied without performing verify tests. The intermediate Vth distributions can be provided for the memory cells assigned to the higher data states but not the lower data states, or for memory cells assigned to both the higher and lower data states.
  • Multi-Pass Programming Process For Memory Device Which Omits Verify Test In First Program Pass

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  • US Patent:
    20200211663, Jul 2, 2020
  • Filed:
    Dec 27, 2018
  • Appl. No.:
    16/233723
  • Inventors:
    - Addison TX, US
    Ching-Huang Lu - Fremont CA, US
    Vinh Diep - San Jose CA, US
    Yingda Dong - Los Altos CA, US
  • Assignee:
    SanDisk Technologies LLC - Addison TX
  • International Classification:
    G11C 16/34
    G11C 16/10
    G11C 11/56
    G11C 16/24
    G11C 16/26
  • Abstract:
    Techniques are provided to reduce neighbor word line interference and charge loss in a multi-pass program operation. In one implementation, the first pass of a multi-pass program operation uses one or more program pulses without performing associated verify tests. The memory cells may be programmed to different intermediate threshold voltage (Vth) distributions in the first program pass. Different bit line voltages can be used to obtain the different intermediate Vth distributions when the single program pulse is applied. In other cases, multiple program pulses are applied without performing verify tests. The intermediate Vth distributions can be provided for the memory cells assigned to the higher data states but not the lower data states, or for memory cells assigned to both the higher and lower data states.

Resumes

Vinh Diep Photo 1

Splunk Consultant

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Location:
San Francisco, CA
Industry:
Information Technology And Services
Work:
AT&T Mobility since Sep 2008
Project/Program Mgmt

Synergie May 2008 - Sep 2008
System Analyst

AT&T Mobility Mar 2007 - May 2008
Remedy Developer

AT&T Mobility/Cingular Wireless Mar 2003 - Dec 2006
Remedy Developer

Cingular Wireless Inc. Mar 2002 - Jul 2002
Remedy Developer
Education:
California State University-Hayward - School of Business and Economics
Skills:
Pl/Sql
Vinh Diep Photo 2

Vinh Diep

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Vinh Diep Photo 3

Vinh Diep

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Location:
2089 Morrill Ave, San Jose, CA 95132
Industry:
Consumer Electronics
Skills:
Product Design
Mechanical Engineering
Consumer Electronics
Product Management
Product Development
Design For Manufacturing
Engineering Management
Cross Functional Team Leadership
Product Lifecycle Management
Injection Molding
Rapid Prototyping

Googleplus

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Vinh Diep

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Vinh Diep

Vinh Diep Photo 6

Vinh Diep

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Vinh Diep

Vinh Diep Photo 8

Vinh Diep

Facebook

Vinh Diep Photo 9

Vinh Diep

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Vinh Diep Photo 10

Vinh Diep

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Vinh Diep Photo 11

Vinh Diep

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Friends:
Jhami Retuerto, Miguel Migs Fonacier, Bright Eyed, Dnes Tth
Vinh Diep Photo 12

Quoc Vinh Diep

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Vinh Diep Photo 13

Cam Vinh Diep

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Vinh Diep Photo 14

Vinh Diep

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Vinh Diep Photo 15

Vinh Ngoan Diep

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Vinh Diep Photo 16

Vinh Diep

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Myspace

Vinh Diep Photo 17

Vinh Diep

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Locality:
PLANO, Texas
Gender:
Male
Birthday:
1937
Vinh Diep Photo 18

Vinh Diep

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Locality:
Nha Trang, Viet Nam
Gender:
Male
Birthday:
1948
Vinh Diep Photo 19

VInh DIep

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Gender:
Male
Birthday:
1945

Classmates

Vinh Diep Photo 20

General Emile-Legault Hig...

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Graduates:
Davinder Minhas (1998-2002),
Diep Tuan Vinh (1982-1986),
Saker Saker Nawel (1995-1999),
Jean Mathieu (1974-1978),
Emmanuelle Tardif (1997-2001)

Youtube

Nonstop 2022 - COMEBACK - Vinh Diep

  • Duration:
    1h 7m 42s

Lan va Diep - Dam Vinh Hung

Lan va Diep DVD.

  • Duration:
    7m 9s

Vinh Diep plays Recuerdos de la Alhambra by F...

  • Duration:
    3m 58s

Vinh Diep plays Cavatina by Stanley Myers

  • Duration:
    3m 9s

Vinh Diep plays Vals Venezolano No. 3 by Anto...

  • Duration:
    3m 4s

Vals Op.8, No.4 (Agustn Barrios) - Vinh Diep

  • Duration:
    4m 35s

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