Wei Peng

US Patent:

7939939, May 10, 2011

Filed:

Oct 4, 2007

Appl. No.:

11/867051

Inventors:

Kejun Zeng - Coppell TX, US
Wei Qun Peng - Coppell TX, US
Rebecca L. Holford - Garland TX, US
Robert John Furtaw - Dallas TX, US
Bernardo Gallegos - The Colony TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 23/52

US Classification:

257737, 257738, 257E21058, 257E23021, 22818022

Abstract:

A metallic interconnect structure () for connecting a gold bump () and a copper pad (), as used for example in semiconductor flip-chip assembly. A first region () of binary AuSnintermetallic is adjacent to the gold bump. A region () of binary AuSnintermetallic is adjacent to the first AuSnregion. Then, a region () of binary gold-tin solid solution is adjacent to the AuSnregion, and a second region () of binary AuSnintermetallic is adjacent to the solid solution region. The second AuSnregion is adjacent to a nickel layer () (preferred thickness about 0. 08 μm), which covers the copper pad. The nickel layer insures that the gold/tin intermetallics and solutions remain substantially free of copper and thus avoid ternary compounds, providing stabilized gold bump/solder connections.

US Patent:

20080083993, Apr 10, 2008

Filed:

Jun 19, 2007

Appl. No.:

11/765286

Inventors:

Kejun Zeng - Coppell TX, US
Donald Abbott - Norton MA, US
Wei Qun Peng - Coppell TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 23/52
H01L 21/00

US Classification:

257777, 438125, 257E23141, 257E21001

Abstract:

A metal interconnection for two workplaces such as a semiconductor chip and an insulating substrate. The first workpiece () has a first contact pad () with a gold stud (); the second workplace () is covered with an insulating layer () and a window in the layer to a second contact pad (). The interconnection between the second pad and the gold stud is a 278 C. eutectic structure () with about 80 weight percent gold and about 20 weight percent tin. The eutectic structure has a Young's modulus of 59.2 GPa and a lamellar micro-structure of the phases AuSn and AuSn. There is substantially no metallic tin at the second contact pad.

US Patent:

20110177686, Jul 21, 2011

Filed:

Mar 29, 2011

Appl. No.:

13/074227

Inventors:

Kejun ZENG - Coppell TX, US
Wei Qun PENG - Coppell TX, US
Rebecca L. HOLFORD - Garland TX, US
Robert John FURTAW - Dallas TX, US
Bernardo GALLEGOS - The Colony TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 21/60

US Classification:

438614, 257E21509

Abstract:

A metallic interconnect structure () for connecting a gold bump () and a contact pad (), as used for example in semiconductor flip-chip assembly. A first region () of binary AuSnintermetallic is adjacent to the gold bump. A region () of binary AuSnintermetallic is adjacent to the first AuSnregion. Then, a region () of binary gold-tin solid solution is adjacent to the AuSnregion, and a second region () of binary AuSnintermetallic is adjacent to the solid solution region. The second AuSnregion is adjacent to a nickel layer () (preferred thickness about 0.08 μm), which covers the copper pad. The nickel layer insures that the gold/tin intermetallics and solutions remain substantially free of copper and thus avoid ternary compounds, providing stabilized gold bump/solder connections.

US Patent:

20120001336, Jan 5, 2012

Filed:

Jul 2, 2010

Appl. No.:

12/829951

Inventors:

Kejun ZENG - Coppell TX, US
Wei Qun PENG - Coppell TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 23/48

US Classification:

257769, 257741, 257E2301

Abstract:

A connection formed by a copper wire () alloyed with a noble metal in a first concentration bonded to a terminal pad () of a semiconductor chip; the end of the wire being covered with a zone () including an alloy of copper and the noble metal in a second concentration higher than the first concentration. When the noble metal is gold, the first concentration may range from about 0.5 to 2.0 weight %, and the second concentration from about 1.0 to 5.0 weight %. The zone of the alloy of the second concentration may have a thickness from about 20 to 50 nm.