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Yingfan Xu

age ~67

from San Jose, CA

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Yingfan Xu Phones & Addresses

  • 3072 Mary Helen Ln, San Jose, CA 95136
  • Fremont, CA
  • 2501 N St, Lincoln, NE 68510 • (402)4389897
  • 1322 E E St, Lincoln, NE 68508 • (402)4389897

Work

  • Company:
    California science and technology university
    Jan 2019
  • Position:
    Instructor and data scientist

Education

  • School / High School:
    California Science and Technology University
    2019 to 2019
  • Specialities:
    Data Science

Skills

Sensors • Design of Experiments • Nanotechnology • Materials Science • Magnetics • Semiconductors • Thin Films • Failure Analysis • Characterization • Sputtering • R&D • Sas Programming • Physical Vapor Deposition • Data Analysis • Jmp • Product Development • Physics • Cross Functional Team Leadership • Mram • Thin Film Characterization • Machine Learning • Scanning Electron Microscopy • Nanomaterials • Sem • Sql • Tem • Hrtem • Edx • Xrd • Natural Language Processing • Deep Learning • Python • Linear Regression • Tensorflow

Ranks

  • Certificate:
    Sas Programming

Industries

Computer Hardware

Resumes

Yingfan Xu Photo 1

Instructor And Data Scientist

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Location:
San Jose, CA
Industry:
Computer Hardware
Work:
California Science and Technology University
Instructor and Data Scientist
Western Digital 2012 - Dec 2018
Product Engineering Development at Hgst and Wdc
Hgst, A Western Digital Company 2009 - 2012
Senior Development Engineer R and D
Grandis, Inc. 2007 - 2008
Senior Staff Engineer
Veeco Instruments 2006 - 2007
Senior Process Engineer
Education:
California Science and Technology University 2019 - 2019
University of Science and Technology Beijing
Masters, Physics Lan Zhou University
Bachelors, Bachelor of Science, Physics Institute of Physics, Chinese Academy of Sciences, Beijing
Doctorates, Doctor of Philosophy, Physics
Skills:
Sensors
Design of Experiments
Nanotechnology
Materials Science
Magnetics
Semiconductors
Thin Films
Failure Analysis
Characterization
Sputtering
R&D
Sas Programming
Physical Vapor Deposition
Data Analysis
Jmp
Product Development
Physics
Cross Functional Team Leadership
Mram
Thin Film Characterization
Machine Learning
Scanning Electron Microscopy
Nanomaterials
Sem
Sql
Tem
Hrtem
Edx
Xrd
Natural Language Processing
Deep Learning
Python
Linear Regression
Tensorflow
Certifications:
Sas Programming
Hands-On Workshop: End-To-End Modeling and Machine Learning In Sas Studio
Neural Networks and Deep Learning
Convolutional Neural Networks
Sequence Models
Improving Deep Neural Netwotks
Structuring Machine Learning Projects
Introduction To Tensorflow For Ai, Ml and Dl
Convolutional Neural Networks In Tensorflow
Natural Language Processing In Tensorflow
Sequences, Time Series and Prediction
Tensorflow In Practice Specialization
Deep Learning Specialization
Emerging Technology Training Program In Artificial Intelligence and Data Science

Us Patents

  • Magnetic Sensor Having Cofebta In Pinned And Free Layer Structures

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  • US Patent:
    20130094108, Apr 18, 2013
  • Filed:
    Oct 17, 2011
  • Appl. No.:
    13/275208
  • Inventors:
    Zheng Gao - San Jose CA, US
    Yingfan Xu - San Jose CA, US
    Hua Ai Zeng - San Jose CA, US
  • Assignee:
    Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
  • International Classification:
    G11B 5/127
    G11B 5/33
    G11B 5/60
  • US Classification:
    3602343, 428812, G9B 504, G9B 5229
  • Abstract:
    A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.

  • Method Of Fabricating L10 Ordered Fept Or Feptx Thin Film With (001) Orientation

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  • US Patent:
    20040191578, Sep 30, 2004
  • Filed:
    Mar 24, 2003
  • Appl. No.:
    10/395827
  • Inventors:
    Jingsheng Chen - Singapore, SG
    Yingfan Xu - Lincoln NE, US
    Jian Wang - Minneapolis MN, US
  • International Classification:
    G11B005/70
  • US Classification:
    428/6940TS, 428/69400R
  • Abstract:
    Methods are provided for producing L1ordered FePt or FePtX (where X=C, Cr, Zr, Cu, Ta, SiO, MgO, AlO, BOor B) thin film with (001) orientation for use in perpendicular magnetic recording media. The methods use strain-induced phase transformation from FCC to FCT. A chromium alloy (CrA) underlayer, where A=Ru, Mo, Mn, W, Ti, Zr or V with (002) preferred orientation is deposited first on any of a variety of disk substrates such as NiP-coated AlMg, glass, glass-ceramic, or glassy carbon. A seed layer such as Ta, NiAl, or C is preferably pre-deposited on the disk substrate. An intermediate layer is deposited on the CrA underlayer to decrease the thickness of an initial growth layer before a FePt or a FePtX film with a (001) texture is deposited on the intermediate layer. These methods produce thin films particularly suitable for recording media with ultrahigh recording densities.
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