Yu Huang

US Patent:

6919736, Jul 19, 2005

Filed:

Jul 14, 2003

Appl. No.:

10/620286

Inventors:

Om P. Agrawal - Los Altos CA, US
Bradley A. Sharpe-Geisler - San Jose CA, US
Bai Nguyen - Union City CA, US
Yu Huang - Cambridge MA, US
Jack Wong - Fremont CA, US

Assignee:

Lattice Semiconductor Corporation - Hillsboro OR

International Classification:

H03K019/177

US Classification:

326 41, 326 38

Abstract:

A field programmable gate array (FPGA) has plural columns of run-time memory provided in each of one or more partitions. Each column of run-time memory has a plurality of configurable memory blocks (CMB's). Each CMB is programmably configurable at least into a shallow-and-widest mode where data words have a maximum bit width and into a deep-and-narrowest mode where data words have a minimum bit width. Each CMB spans plural interconnect buses and the bits of its widest data words are distributed among the spanned interconnect buses. When a deep-and-narrow mode is invoked, CMB's of alternate columns operate in complementary fashion so that bits of narrowed words from one CMB move through a first subset of the interconnect buses while bits of narrowed words from a second CMB, in an alternate column, move through a second subset of the interconnect buses, where the second subset is mutually exclusive of the first subset of the interconnect buses. On the other hand, when the shallow-and-widest mode is invoked, the bits of the wide words of CMB's in alternate columns shared interconnect buses on an overlapping basis. In one embodiment, the shared interconnect buses are tri-statable.

US Patent:

7211464, May 1, 2007

Filed:

Mar 17, 2005

Appl. No.:

11/082372

Inventors:

Charles M. Lieber - Lexington MA, US
Yi Cui - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Yu Huang - Cambridge MA, US

Assignee:

President & Fellows of Harvard College - Cambridge MA

International Classification:

H01L 51/40
D01C 5/00
D01F 9/12

US Classification:

438 99, 438962, 4234473, 977762, 977936, 257E29086, 257E29174, 257E51023

Abstract:

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing.

US Patent:

7230758, Jun 12, 2007

Filed:

Jun 30, 2005

Appl. No.:

11/171070

Inventors:

Yu Huang - Los Angeles CA, US

Assignee:

Luminoz, Inc. - Tokyo

International Classification:

G03B 21/60
G03B 21/56

US Classification:

359457, 359459, 359460

Abstract:

An off-axis Fresnel lens is disclosed that, when combined with a rear projection screen (comprising, e. g. , a lenticular lens, a diffuser, or both), enables construction of rear-projection-type screen devices (e. g. , projection television systems) that are thinner and have improved contrast and resolution when compared with conventional projection screen devices. The off-axis Fresnel lens comprises a plurality of concentric, outwardly-extending, total internal reflection-type prism facets. Each facet, in turn, comprises top and bottom sides, one or both of which may be flat or outwardly convex. Embodiments of the invention may also include concentric opaque sections that are disposed between successive prisms, between the prism base and the output surface of the Fresnel lens, and/or between the output surface of the Fresnel lens and the input surface of the projection screen in order to improve contrast. Contrast may also be enhanced by laminating the Fresnel lens to the projection screen.

US Patent:

7254151, Aug 7, 2007

Filed:

Dec 11, 2003

Appl. No.:

10/734086

Inventors:

Charles M. Lieber - Lexington MA, US
Xiangfeng Duan - Cambridge MA, US
Yu Huang - Cambridge MA, US
Ritesh Agarwal - Cambridge MA, US

Assignee:

President & Fellows of Harvard College - Cambridge MA

International Classification:

H01S 5/00

US Classification:

372 4401, 977951, 977825

Abstract:

This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e. g. , LEDs), amplified stimulated emission devices (e. g. , lasers), waveguides, and optical cavities (e. g. , resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device.

US Patent:

7301199, Nov 27, 2007

Filed:

Jul 16, 2002

Appl. No.:

10/196337

Inventors:

Charles M. Lieber - Lexington MA, US
Xiangfeng Duan - Somerville MA, US
Yi Cui - Union City CA, US
Yu Huang - Cambridge MA, US
Mark Gudiksen - Watertown MA, US
Lincoln J. Lauhon - Boston MA, US
Jianfang Wang - Goleta CA, US
Hongkun Park - Lexington MA, US
Qingqiao Wei - Corvallis OR, US
Wenjie Liang - Somerville MA, US
David C. Smith - Reading, GB
Deli Wang - Cambridge MA, US
Zhaohui Zhong - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 29/76
H01L 29/94
H01L 29/06

US Classification:

257327, 257 9, 977938, 977936, 977958

Abstract:

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

US Patent:

7476596, Jan 13, 2009

Filed:

Oct 4, 2006

Appl. No.:

11/543336

Inventors:

Charles M. Lieber - Lexington MA, US
Yi Cui - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Yu Huang - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 21/46

US Classification:

438458, 257E216, 977762, 977883

Abstract:

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.

US Patent:

7595260, Sep 29, 2009

Filed:

Oct 4, 2006

Appl. No.:

11/543326

Inventors:

Charles M. Lieber - Lexington MA, US
Yi Cui - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Yu Huang - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 21/30
H01L 21/86

US Classification:

438495, 438499, 977858, 977882

Abstract:

A bulk-doped semiconductor may be at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may have a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof.

US Patent:

7666708, Feb 23, 2010

Filed:

Oct 4, 2006

Appl. No.:

11/543352

Inventors:

Charles M. Lieber - Lexington MA, US
Yi Cui - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Yu Huang - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 51/40
D01C 5/00
D01F 9/12

US Classification:

438 99, 4234473, 977762, 257E51023

Abstract:

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.