Yu Huang

US Patent:

7230758, Jun 12, 2007

Filed:

Jun 30, 2005

Appl. No.:

11/171070

Inventors:

Yu Huang - Los Angeles CA, US

Assignee:

Luminoz, Inc. - Tokyo

International Classification:

G03B 21/60
G03B 21/56

US Classification:

359457, 359459, 359460

Abstract:

An off-axis Fresnel lens is disclosed that, when combined with a rear projection screen (comprising, e. g. , a lenticular lens, a diffuser, or both), enables construction of rear-projection-type screen devices (e. g. , projection television systems) that are thinner and have improved contrast and resolution when compared with conventional projection screen devices. The off-axis Fresnel lens comprises a plurality of concentric, outwardly-extending, total internal reflection-type prism facets. Each facet, in turn, comprises top and bottom sides, one or both of which may be flat or outwardly convex. Embodiments of the invention may also include concentric opaque sections that are disposed between successive prisms, between the prism base and the output surface of the Fresnel lens, and/or between the output surface of the Fresnel lens and the input surface of the projection screen in order to improve contrast. Contrast may also be enhanced by laminating the Fresnel lens to the projection screen.

US Patent:

7766493, Aug 3, 2010

Filed:

Jul 22, 2005

Appl. No.:

11/658522

Inventors:

Terence Alfred Cooper - Newark DE, US
Adnan Malik - Los Angeles CA, US
Yu Huang - Los Angeles CA, US

Assignee:

Luminoz, Inc.

International Classification:

G02B 27/00

US Classification:

359614, 359601, 359613

Abstract:

The present disclosure provides optical devices having an asymmetric viewing area imparting improved optical properties to the device.

US Patent:

7852556, Dec 14, 2010

Filed:

Jun 6, 2007

Appl. No.:

11/810489

Inventors:

Yu Huang - Los Angeles CA, US
Adnan Malik - Los Angeles CA, US

Assignee:

Luminoz, Inc. - Tokyo

International Classification:

G03B 21/60
G03B 21/56

US Classification:

359457, 359459, 359460

Abstract:

Off-axis total internal reflection Fresnel lenses and projection screens are disclosed that, when combined, enable construction of projection assemblies for rear-projection-type screen devices (e. g. , projection television systems) that are thinner, provide easier handling and maintenance, and have improved contrast, focusing, and resolution when compared with conventional projection screen devices. The off-axis Fresnel lens comprises a plurality of concentric, outwardly-extending, total internal reflection-type prism facets, the top side of which may be aspherical. Embodiments of the invention also include projection screens having at least one diffuser and one lenticular lens. In addition, one or more opaque layers may be used to improve contrast. The various components, e. g. , the fresnel lens, the diffuser, the lenticular lens(es), the opaque layer(s), etc.

US Patent:

20070252136, Nov 1, 2007

Filed:

Jul 2, 2007

Appl. No.:

11/824618

Inventors:

Charles Lieber - Lexington MA, US
Yi Cui - Union City CA, US
Xiangfeng Duan - Los Angeles CA, US
Yu Huang - Los Angeles CA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 31/109

US Classification:

257024000, 257014000, 257E31067

Abstract:

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

US Patent:

20090057650, Mar 5, 2009

Filed:

Feb 27, 2008

Appl. No.:

12/072844

Inventors:

Charles M. Lieber - Lexington MA, US
Xiangfeng Duan - Los Angeles CA, US
Yi Cui - Sunnyvale CA, US
Yu Huang - Los Angeles CA, US
Mark Gudiksen - Castro Valley CA, US
Lincoln J. Lauhon - Chicago IL, US
Jianfang Wang - Goleta CA, US
Hongkun Park - Lexington MA, US
Qingqiao Wei - Corvallis OR, US
Wenjie Liang - Oakland CA, US
David C. Smith - Reading, GB
Deli Wang - San Diego CA, US
Zhaohui Zhong - Ithaca NY, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 29/66

US Classification:

257 24, 257E29168, 977762

Abstract:

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

US Patent:

20100155698, Jun 24, 2010

Filed:

Jun 26, 2009

Appl. No.:

12/459177

Inventors:

Charles M. Lieber - Lexington MA, US
Xiangfeng Duan - Los Angeles CA, US
Yi Cui - Sunnyvale CA, US
Yu Huang - Los Angeles CA, US
Mark Gudiksen - Castro Valley CA, US
Lincoln J. Lauhon - Chicago IL, US
Jianfang Wang - Goleta CA, US
Hongkun Park - Lexington MA, US
Qingqiao Wei - Corvallis OR, US
Wenjie Liang - Oakland CA, US
David C. Smith - Reading, GB
Deli Wang - San Diego CA, US
Zhaohui Zhong - Ithaca NY, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 29/12
H01L 21/20

US Classification:

257 14, 438478, 257E2907, 257E2109, 977762

Abstract:

The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

US Patent:

20110184807, Jul 28, 2011

Filed:

Dec 1, 2010

Appl. No.:

12/957972

Inventors:

Qi Wang - Irvine CA, US
Shu Wang - Irvine CA, US
Yu Huang - Bridgewater NJ, US
Hong Heather Yu - West Windsor NJ, US
Dong-Qing Zhang - Plainsboro NJ, US

Assignee:

FutureWei Technologies, Inc. - Plano TX

International Classification:

G06Q 30/00

US Classification:

705 1453, 705 1466

Abstract:

In accordance with an embodiment, a method of inserting advertisements into video content includes electronically filtering a first list of advertisements according to user preference data to determine a second list of advertisements. The video content has a plurality of segments, each segment of which is associated with a category from the plurality of categories. Furthermore, each advertisement in the first list of advertisements is associated with a video category from a plurality of categories, and electronically filtering includes filtering the first list of advertisements for the plurality of video segments on a segment by segment basis. The method further includes transmitting the second list of advertisements to a user device for insertion with the video content.

US Patent:

20110185381, Jul 28, 2011

Filed:

Dec 1, 2010

Appl. No.:

12/958102

Inventors:

Qi Wang - Irvine CA, US
Shu Wang - Irvine CA, US
Yu Huang - Bridgewater NJ, US
Hong Heather Yu - West Windsor NJ, US
Dong-Qing Zhang - Plainsboro NJ, US

Assignee:

FutureWei Technologies, Inc. - Plano TX

International Classification:

H04N 7/025

US Classification:

725 32

Abstract:

In accordance with an embodiment, a method of matching video content to advertising content includes electronically receiving a video content metadata from a content provider, and matching the video content metadata to advertising content metadata of a global list of advertisements. The video content metadata corresponds to video content being sent to a user device and includes at least one keyword. Furthermore, the advertising content metadata corresponds to advertising content and includes at least one keyword. Matching the video content metadata to advertising content metadata includes comparing the at least one keyword of the video content metadata to the at least one keyword of the advertising content metadata.