Yu Fang Jiang from Gaithersburg, MD, age 60

Us Patents

Tin Oxide Films In Semiconductor Device Manufacturing
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US Patent:

20220270877, Aug 25, 2022
Filed:

Feb 10, 2022
Appl. No.:

17/650550
Inventors:

- Fremont CA, US
Samantha S.H. Tan - Newark CA, US
Yu Jiang - Sunnyvale CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:

H01L 21/033
H01L 21/311
H01L 21/027
H01L 21/67
H01L 21/02
H01L 21/467
H01L 21/3065
H01L 21/3213
H01L 21/465
Abstract:

A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).

Tin Oxide Films In Semiconductor Device Manufacturing
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US Patent:

20210265163, Aug 26, 2021
Filed:

May 13, 2021
Appl. No.:

17/302850
Inventors:

- Fremont CA, US
Samantha S.H. Tan - Fremont CA, US
Yu Jiang - San Jose CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:

H01L 21/033
H01L 21/311
H01L 21/027
H01L 21/67
H01L 21/02
H01L 21/467
H01L 21/3065
H01L 21/3213
H01L 21/465
Abstract:

Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.

Tin Oxide Films In Semiconductor Device Manufacturing
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US Patent:

20200083044, Mar 12, 2020
Filed:

Nov 18, 2019
Appl. No.:

16/687142
Inventors:

- Fremont CA, US
Samantha S.H. Tan - Fremont CA, US
Yu Jiang - San Jose CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:

H01L 21/033
H01L 21/311
H01L 21/02
H01L 21/465
H01L 21/3213
H01L 21/3065
H01L 21/467
H01L 21/67
H01L 21/027
Abstract:

Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes Hand a hydrocarbon.

Tin Oxide Films In Semiconductor Device Manufacturing
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US Patent:

20180240667, Aug 23, 2018
Filed:

Feb 12, 2018
Appl. No.:

15/894635
Inventors:

- Fremont CA, US
Samantha Tan - Fremont CA, US
Yu Jiang - San Jose CA, US
Hui-Jung Wu - Pleasanton CA, US
Richard Wise - Los Gatos CA, US
Yang Pan - Los Altos CA, US
Nader Shamma - Cupertino CA, US
Boris Volosskiy - San Jose CA, US
International Classification:

H01L 21/033
H01L 21/02
H01L 21/311
H01L 21/027
H01L 21/67
Abstract:

Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.

Resumes

Associate Principle Scientist, Clinical Pharmacology

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Location:

Gaithersburg, MD

Industry:

Pharmaceuticals

Work:

Astrazeneca
Associate Principle Scientist, Clinical Pharmacology
Alnylam Pharmaceuticals Aug 2017 - Jul 2018
Scientist, Pharmacometrics
Fda Feb 2017 - Jul 2017
Orise Fellow
Genentech Jun 2016 - Sep 2016
Intern

Education:

University of Iowa 2018 - 2022
Master of Science, Masters University of Iowa 2015 - 2017
Master of Science, Masters University of Iowa 2012 - 2017
Doctorates, Doctor of Philosophy, Philosophy, Pharmaceutical Science China Medical University (Tw) 2007 - 2012
Bachelors, Pharmacy

Skills:

Pharmacometrics
Modeling and Simulation
Nonmem
R
Life Sciences
Winnonlin
Statistical Modeling
Sas
Pharmacokinetics
Clinical Trials
Pharmaceutical Industry
Drug Discovery
Pharmacology
Clinical Research

Languages:

English
Mandarin

Certifications:

Certificate For Completing Advanced Features of Nonmem7 Workshop
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Yu Hui Jiang

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Yu Jiang

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Industry:

Education Management

Yu Jiang

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Skills:

Leadership
Microsoft Office
Microsoft Word
Powerpoint
Research
Microsoft Excel
Social Media
Marketing
Public Speaking
Customer Service

Yu Jiang

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Yu Jiang

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Yu Jiang

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Location:

United States

Process Development Engineer At Lam Research

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Position:

Process Development Engineer at Lam Research

Location:

San Jose, California

Industry:

Semiconductors

Work:

Lam Research since Jun 2012
Process Development Engineer
Novellus Systems Jun 2011 - Jun 2012
Process Development Engineer
Lawrence Berkeley National Laboratory Nov 2009 - Jun 2011
Chemist Postdoc Fellow
University of California, Santa Cruz Sep 2004 - Aug 2009
Graduate Student Researcher
Novellus Systems Jun 2008 - Sep 2008
Process Intern

Education:

University of California, Santa Cruz 2004 - 2009
Ph.D, Condensed Matter Physics University of Science and Technology of China 1999 - 2004
B.S., Physics

Skills:

Fortran
Spectroscopy
Solid State Physics
X-ray
English
Mandarin
Linux
Shell Scripting
Chinese
LaTeX
Thin Films
Materials Science

Interests:

new science and technology, reading history books and scientific novels, surfing on the internet, watching films, enjoy good food

Honor & Awards:

Selected Publications “A Study of the local distortions of the Perovskite system La1-xSrxCoO3 (0 ≤ x ≤ 0.35) using the Extended X-ray Absorption Fine Structure technique”, Y. Jiang, F. Bridges, N. Sundaram, D. P. Belanger, I. E. Anderson, J. F. Mitchell, H. Zheng, Phys. Rev. B 80, 144423 (2009). “Local Structure of La1-xSrxCoO3 Determined from EXAFS and Neutron Pair Distribution Function Studies”, N. Sundaram, Y. Jiang, I. E. Anderson, D. P. Belanger, C. H. Booth, F. Bridges, J. F. Mitchell, Th. Proffen, and H. Zheng, Phys. Rev. Lett. 102, 026401 (2009). “Synthesis, Structural, and Optical Properties of Stable ZnS:Cu,Cl Nanocrystals”, C. Corrado, Y. Jiang, F. Oba, M. Kozina, F. Bridges, and J. Z. Zhang, J. Phys. Chem. A. 13, 3830 (2009). “Relationship between macroscopic physical properties and local distortions of low-doping La1-xCaxMnO3: An EXAFS study”, Y. Jiang, F. Bridges, L. Downward, and J. J. Neumeier, Phys. Rev. B 76, 224428 (2007).

License Records

Yu Jiang

License #:

28864 - Active

Issued Date:

Dec 20, 2010

Renew Date:

Dec 1, 2015

Expiration Date:

Nov 30, 2017

Type:

Certified Public Accountant

Name / Title

Company / Classification

Phones & Addresses

Yu Rong Jiang
Director, Manager

WENYAN INTERNATIONAL BUSINESS CORPORATION
Nonclassifiable Establishments

5974 Westchester Park Dr APT T1, College Park, MD 20740
12607 Sky Spg Ln, Pearland, TX 77584
310 Prettyman Dr, Rockville, MD 20850
210 Pretty Man Dr APT 7210, Rockville, MD 20850

Yu Jiang

Jinli Weiye LLC

663 Glenbrook Dr, Palo Alto, CA 94306

Yu Fang Jiang

CHINA CROWN BUFFET, INC

Yu Lan Jiang

EASTERN JIANG BUFFET INC

Yu Zhu Jiang
President

PJ TRENDS, INC
Nonclassifiable Establishments

123 Jules Ave, San Francisco, CA 94112