Yu K Zhao

US Patent:

7489835, Feb 10, 2009

Filed:

Mar 28, 2008

Appl. No.:

12/057446

Inventors:

Hua Xia - Altamont NY, US
Jeffrey Scott Goldmeer - Latham NY, US
Kevin Thomas McCarthy - Troy NY, US
Aditya Kumar - Schenectady NY, US
Ravindra Annigeri - Roswell GA, US
Ertan Yilmaz - Albany NY, US
Avinash Vinayak Taware - Rexford NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

G02B 6/00

US Classification:

385 12

Abstract:

A fiber gas sensor includes a fiber core with first and second refractive index periodic modulated grating structures having different amplitude modulation profiles positioned about the fiber core. A fiber cladding is positioned about the first and second refractive index periodic modulated grating structures. A sensing layer is positioned about the fiber cladding of one of the refractive index periodic modulated grating structures. The sensing layer includes a sensing material made of a Pd-based alloy, such as nano-PdOx, nano-Pd(x)Au(y)Ni(1-x-y) or nano-Pd/Au/WOx. The fiber gas sensor provides a measurement of localized, temperature-corrected gas concentration and composition from a combustion environment. A reflection-based or a transmission-based sensing system with an array of one or more fiber gas sensors is also described.

US Patent:

7939363, May 10, 2011

Filed:

Oct 27, 2010

Appl. No.:

12/913296

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 21/00

US Classification:

438 87, 136260, 438 94

Abstract:

A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e. g. , a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer. An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is also provided.

US Patent:

8349084, Jan 8, 2013

Filed:

Apr 5, 2011

Appl. No.:

13/080029

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

C23C 16/54
C23C 16/455
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118718, 118719, 118726, 118729, 15634533, 15634534, 15634554

Abstract:

An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e. g. , a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.

US Patent:

8362311, Jan 29, 2013

Filed:

Sep 30, 2009

Appl. No.:

12/571036

Inventors:

Richard R. Schrock - Winchester MA, US
Annie J. King - Cambridge MA, US
Yu Zhao - Brighton MA, US
Margaret M. Flook - Cambridge MA, US
Amir H. Hoveyda - Lincoln MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA
Trustees of Boston College - Chestnut Hill MA

International Classification:

C07C 6/00
C07F 11/00

US Classification:

585646, 556 63, 556413

Abstract:

The present invention relates generally to catalysts and processes for the Z-selective formation of internal olefin(s) from terminal olefin(s) via homo-metathesis reactions.

US Patent:

20090312559, Dec 17, 2009

Filed:

Jan 10, 2007

Appl. No.:

12/160411

Inventors:

Amir H. Hoveyda - Lincoln MA, US
Marc L. Snapper - Ashland MA, US
Jason Rodrigo - Brighton MA, US
Yu Zhao - Brighton MA, US

International Classification:

C07F 7/08
C07D 233/61

US Classification:

5483401, 556436, 556449

Abstract:

The present invention provides methods, compositions and systems for silylation of substrates, including direct asymmetric silylation of a substrate to provide enantiomerically enriched silylated products.

US Patent:

20120052617, Mar 1, 2012

Filed:

Dec 20, 2010

Appl. No.:

12/973093

Inventors:

James Neil Johnson - Scotia NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 31/18
C23C 16/06

US Classification:

438 84, 118724, 257E31015

Abstract:

An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.

US Patent:

20120325298, Dec 27, 2012

Filed:

Jun 21, 2011

Appl. No.:

13/165298

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

GENERAL ELECTRIC COMPANY - SCHENECTADY NY

International Classification:

H01L 31/06
H01L 31/18

US Classification:

136255, 438 57, 438 84, 257E31008, 257E31001

Abstract:

One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.

US Patent:

20130274482, Oct 17, 2013

Filed:

Jan 28, 2013

Appl. No.:

13/751815

Inventors:

Yu Zhao - Brighton MA, US
Margaret M. Flook - Cambridge MA, US
Amir H. Hoveyda - Lincoln MA, US

International Classification:

B01J 31/22

US Classification:

548402

Abstract:

The present invention relates generally to catalysts and processes for the Z-selective formation of internal olefin(s) from terminal olefin(s) via homo-metathesis reactions.