Yu K Zhao

US Patent:

7489835, Feb 10, 2009

Filed:

Mar 28, 2008

Appl. No.:

12/057446

Inventors:

Hua Xia - Altamont NY, US
Jeffrey Scott Goldmeer - Latham NY, US
Kevin Thomas McCarthy - Troy NY, US
Aditya Kumar - Schenectady NY, US
Ravindra Annigeri - Roswell GA, US
Ertan Yilmaz - Albany NY, US
Avinash Vinayak Taware - Rexford NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

G02B 6/00

US Classification:

385 12

Abstract:

A fiber gas sensor includes a fiber core with first and second refractive index periodic modulated grating structures having different amplitude modulation profiles positioned about the fiber core. A fiber cladding is positioned about the first and second refractive index periodic modulated grating structures. A sensing layer is positioned about the fiber cladding of one of the refractive index periodic modulated grating structures. The sensing layer includes a sensing material made of a Pd-based alloy, such as nano-PdOx, nano-Pd(x)Au(y)Ni(1-x-y) or nano-Pd/Au/WOx. The fiber gas sensor provides a measurement of localized, temperature-corrected gas concentration and composition from a combustion environment. A reflection-based or a transmission-based sensing system with an array of one or more fiber gas sensors is also described.

US Patent:

7939363, May 10, 2011

Filed:

Oct 27, 2010

Appl. No.:

12/913296

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 21/00

US Classification:

438 87, 136260, 438 94

Abstract:

A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e. g. , a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer. An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is also provided.

US Patent:

8349084, Jan 8, 2013

Filed:

Apr 5, 2011

Appl. No.:

13/080029

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

C23C 16/54
C23C 16/455
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118718, 118719, 118726, 118729, 15634533, 15634534, 15634554

Abstract:

An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e. g. , a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.

US Patent:

20120052617, Mar 1, 2012

Filed:

Dec 20, 2010

Appl. No.:

12/973093

Inventors:

James Neil Johnson - Scotia NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 31/18
C23C 16/06

US Classification:

438 84, 118724, 257E31015

Abstract:

An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.

US Patent:

20120325298, Dec 27, 2012

Filed:

Jun 21, 2011

Appl. No.:

13/165298

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

GENERAL ELECTRIC COMPANY - SCHENECTADY NY

International Classification:

H01L 31/06
H01L 31/18

US Classification:

136255, 438 57, 438 84, 257E31008, 257E31001

Abstract:

One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.

US Patent:

20200165668, May 28, 2020

Filed:

Aug 10, 2018

Appl. No.:

16/638346

Inventors:

- Palo Alto CA, US
Zhijie YANG - Palo Alto CA, US
Xin CHEN - Palo Alto CA, US
Yu ZHAO - Palo Alto CA, US
Rong WANG - Palo Alto CA, US

Assignee:

ATILA BIOSYSTEMS INCORPORATED - Palo Alto CA

International Classification:

C12Q 1/6858
C12Q 1/6853

Abstract:

The invention provides methods of digital amplification using primers of limited nucleotide composition. Limited nucleotide composition means that the primers are underrepresented in at least one nucleotide type. Such primers have much reduced capacity to prime from each other or to extend initiated by mispriming from other than at their intended primer binding sites in a target nucleic acid.

US Patent:

20190287079, Sep 19, 2019

Filed:

Mar 19, 2018

Appl. No.:

15/925070

Inventors:

- Toyota-shi, JP
Yu Zhao - Mountain View CA, US

International Classification:

G06Q 10/00
G07C 5/00
G07C 5/08
G06Q 30/06

Abstract:

The disclosure includes embodiments for modifying a performance of a vehicle component whose performance is affected by a vehicle fluid that is contaminated by water. A method according to some embodiments generating a digital twin of a vehicle. The method includes receiving digital data recorded by a sensor and describing the vehicle as it exists in a real-world. The method includes updating the digital twin of the vehicle based on the digital data describing the vehicle so that the digital twin is consistent with a condition of the vehicle as it exists in the real-world.

US Patent:

20190203271, Jul 4, 2019

Filed:

May 24, 2017

Appl. No.:

16/303647

Inventors:

- Palo Alto CA, US
Xin CHEN - San Jose CA, US
Rong WANG - Mountain View CA, US
Zhijie YANG - CA, US
Yu ZHAO - Mountain View CA, US

Assignee:

Atila Biosystems, Inc. - Palo Alto CA

International Classification:

C12Q 1/6818
C12Q 1/6844
C12Q 1/6853
C12Q 1/686
C12Q 1/6806

Abstract:

The present disclosure provides compositions, methods and kits for Omega amplification technologies. In addition, the present disclosure provides compositions, methods and kits for universal FQ probe and for G-quadruplex detection methods for use in isothermal amplification technologies.