Yu U Zhao

US Patent:

7489835, Feb 10, 2009

Filed:

Mar 28, 2008

Appl. No.:

12/057446

Inventors:

Hua Xia - Altamont NY, US
Jeffrey Scott Goldmeer - Latham NY, US
Kevin Thomas McCarthy - Troy NY, US
Aditya Kumar - Schenectady NY, US
Ravindra Annigeri - Roswell GA, US
Ertan Yilmaz - Albany NY, US
Avinash Vinayak Taware - Rexford NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

G02B 6/00

US Classification:

385 12

Abstract:

A fiber gas sensor includes a fiber core with first and second refractive index periodic modulated grating structures having different amplitude modulation profiles positioned about the fiber core. A fiber cladding is positioned about the first and second refractive index periodic modulated grating structures. A sensing layer is positioned about the fiber cladding of one of the refractive index periodic modulated grating structures. The sensing layer includes a sensing material made of a Pd-based alloy, such as nano-PdOx, nano-Pd(x)Au(y)Ni(1-x-y) or nano-Pd/Au/WOx. The fiber gas sensor provides a measurement of localized, temperature-corrected gas concentration and composition from a combustion environment. A reflection-based or a transmission-based sensing system with an array of one or more fiber gas sensors is also described.

US Patent:

7939363, May 10, 2011

Filed:

Oct 27, 2010

Appl. No.:

12/913296

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 21/00

US Classification:

438 87, 136260, 438 94

Abstract:

A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e. g. , a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer. An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is also provided.

US Patent:

8039290, Oct 18, 2011

Filed:

Dec 16, 2009

Appl. No.:

12/639099

Inventors:

Bogdan Lita - Boulder CO, US
Michael Burnash Cozens - Wheat Ridge CO, US
Mehran Sadeghi - Kent, GB
Yu Zhao - Niskayuna NY, US
Renee Mary Whitney - Voorheesville NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 21/00

US Classification:

438 84, 438 94, 438 95, 257E31015, 257E31005, 257E31008

Abstract:

Methods of making a photovoltaic (PV) cell are disclosed. The methods comprise at least the steps of, providing a first component comprising a cadmium telluride (CdTe) layer comprising an interfacial region, and subjecting the first component to a functionalizing treatment in the presence of a material comprising copper.

US Patent:

8349084, Jan 8, 2013

Filed:

Apr 5, 2011

Appl. No.:

13/080029

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

C23C 16/54
C23C 16/455
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118718, 118719, 118726, 118729, 15634533, 15634534, 15634554

Abstract:

An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e. g. , a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.

US Patent:

20120052617, Mar 1, 2012

Filed:

Dec 20, 2010

Appl. No.:

12/973093

Inventors:

James Neil Johnson - Scotia NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01L 31/18
C23C 16/06

US Classification:

438 84, 118724, 257E31015

Abstract:

An apparatus and related process are provided for vapor deposition of a sublimated source material as a doped thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material supplied from a first feed tube. A second feed tube can provide a dopant material into the deposition head. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus to further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.

US Patent:

20120325298, Dec 27, 2012

Filed:

Jun 21, 2011

Appl. No.:

13/165298

Inventors:

James Neil Johnson - Scotia NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

Assignee:

GENERAL ELECTRIC COMPANY - SCHENECTADY NY

International Classification:

H01L 31/06
H01L 31/18

US Classification:

136255, 438 57, 438 84, 257E31008, 257E31001

Abstract:

One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.

US Patent:

20160034745, Feb 4, 2016

Filed:

Aug 1, 2014

Appl. No.:

14/449916

Inventors:

- Schenectady NY, US
Faisal Ahmed Syud - Clifton Park NY, US
John Brian Hewgley - Schenectady NY, US
Yu Zhao - Niskayuna NY, US

International Classification:

G06K 9/00
G06T 7/00

Abstract:

A flat panel imaging system for imaging cells provided on a cell medium is disclosed. The system includes a housing having a base portion and a lid that collectively form a closed environment to exclude external sources of light, and a flat panel detector encased in the base portion and having an array of pixels each including a photodiode and transistor. The system also includes a first light source that illuminates cells on the cell medium to excite at least a portion of the cells and cause those cells to generate photons that are captured by the array of pixels and a second light source to illuminate cells on the cell medium with a light different from the light from the first light source and that provides for a capturing of photons representative of photons transmitted through the cells on the cell medium.

US Patent:

20150285761, Oct 8, 2015

Filed:

Apr 29, 2014

Appl. No.:

14/264133

Inventors:

- Schenectady NY, US
Brian David Yanoff - Niskayuna NY, US
Aaron Judy Couture - Schenectady NY, US
Hakan Erik Roos - Uppsala, SE
Yu Zhao - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

G01N 27/447

Abstract:

A system and method for generating a digital image in fluorescence gel imaging is disclosed. The method includes providing a gel sample and placing the gel sample on a flat panel detector having array of photodiodes and transistors that collect light generated from the gel sample. The gel sample is illuminated using a light source integrated into the flat panel imaging system and light emitted by the gel sample responsive to an excitation of the gel sample by light provided by the light source is then collected, with the light emitted by the gel sample being collected by the array of photodiodes of the flat panel detector and converted to electric charges to generate light data. The light data is then processed to generate a digital image of the gel sample.