Zachary B Katz

US Patent:

7345332, Mar 18, 2008

Filed:

Mar 24, 2006

Appl. No.:

11/389632

Inventors:

Zachary B. Katz - Sandy UT, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 27/108

US Classification:

257296, 257300

Abstract:

The invention includes a method of forming a planarized surface over a semiconductor substrate. A substrate is provided which includes a memory array region and a peripheral region proximate the memory array region. The memory array region has a higher average elevational height than the peripheral region. Polysilazane is formed over the memory array region and over the peripheral region. The polysilazane is densified. A material is formed over the polysilazane. The material is planarized while using the densified polysilazane as a stop. The planarization forms a planarized surface which extends over the memory array and peripheral regions. The planarized surface comprises both the densified polysilazane and the material.

US Patent:

7554171, Jun 30, 2009

Filed:

Jan 14, 2008

Appl. No.:

12/013963

Inventors:

Zachary B. Katz - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 29/00

US Classification:

257506, 257E21304

Abstract:

The invention includes a method of forming a planarized surface over a semiconductor substrate. A substrate is provided which includes a memory array region and a peripheral region proximate the memory array region. The memory array region has a higher average elevational height than the peripheral region. Polysilazane is formed over the memory array region and over the peripheral region. The polysilazane is densified. A material is formed over the polysilazane. The material is planarized while using the densified polysilazane as a stop. The planarization forms a planarized surface which extends over the memory array and peripheral regions. The planarized surface comprises both the densified polysilazane and the material.

US Patent:

20050164519, Jul 28, 2005

Filed:

Jan 26, 2004

Appl. No.:

10/765699

Inventors:

Zachary Katz - Boise ID, US

International Classification:

H01L021/31

US Classification:

438778000

Abstract:

The invention includes a method of forming a planarized surface over a semiconductor substrate. A substrate is provided which includes a memory array region and a peripheral region proximate the memory array region. The memory array region has a higher average elevational height than the peripheral region. Polysilazane is formed over the memory array region and over the peripheral region. The polysilazane is densified. A material is formed over the polysilazane. The material is planarized while using the densified polysilazane as a stop. The planarization forms a planarized surface which extends over the memory array and peripheral regions. The planarized surface comprises both the densified polysilazane and the material.