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Zhenlei Shen

age ~48

from Milpitas, CA

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Also known as:
  • Zhenlei Shin
  • Zhen L Shen
  • Zhenlei Zhenlei Shen
Phone and address:
2258 Cresthaven St, Milpitas, CA 95035
(208)3401158
Related to:
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Zhenlei Shen Phones & Addresses

  • 2258 Cresthaven St, Milpitas, CA 95035 • (208)3401158
  • San Jose, CA
  • Boise, ID
  • Bethlehem, PA

Us Patents

  • Methods, Devices, And Systems For Dealing With Threshold Voltage Change In Memory Devices

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  • US Patent:
    8305809, Nov 6, 2012
  • Filed:
    Nov 28, 2011
  • Appl. No.:
    13/305164
  • Inventors:
    Zhenlei Shen - Boise ID, US
    William H. Radke - Los Gatos CA, US
    Peter Feeley - Boise ID, US
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    G11C 16/06
  • US Classification:
    36518509, 3651852, 36518521, 36518524
  • Abstract:
    The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.

  • Methods, Devices, And Systems For Adjusting Sensing Voltages In Devices

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  • US Patent:
    8358542, Jan 22, 2013
  • Filed:
    Jan 14, 2011
  • Appl. No.:
    13/007274
  • Inventors:
    William H. Radke - Los Gatos CA, US
    Zhenlei Shen - Boise ID, US
    Peter Feeley - Boise ID, US
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    G11C 16/06
  • US Classification:
    36518521, 36518524, 36518517, 36518503, 36518907
  • Abstract:
    The present disclosure includes methods, devices, and systems for adjusting sensing voltages in devices. One or more embodiments include memory cells, and a controller configured to perform a sense operation on the memory cells using a sensing voltage to determine a quantity of the memory cells having a threshold voltage (Vt) greater than the sensing voltage and adjust a sensing voltage used to determine a state of the memory cells based, at least partially, on the determined quantity of memory cells.

  • Determining And Using Soft Data In Memory Devices And Systems

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  • US Patent:
    8451664, May 28, 2013
  • Filed:
    May 12, 2010
  • Appl. No.:
    12/778577
  • Inventors:
    William H. Radke - Los Gatos CA, US
    Zhenlei Shen - Boise ID, US
    Peter Feeley - Boise ID, US
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    G11C 11/34
  • US Classification:
    36518524, 36518521, 36518522, 36518523
  • Abstract:
    The present disclosure includes methods, devices, and systems for determining and using soft data in memory devices and systems. One or more embodiments include an array of memory cells and control circuitry coupled to the array. The control circuitry is configured to perform a number of sense operations on the memory cells using a number of sensing voltages to determine soft data associated with a target state of the memory cells, and adjust a sensing voltage used to determine the target state based, at least partially, on the determined soft data.

  • Methods, Devices, And Systems For Dealing With Threshold Voltage Change In Memory Devices

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  • US Patent:
    20110051513, Mar 3, 2011
  • Filed:
    Aug 25, 2009
  • Appl. No.:
    12/547280
  • Inventors:
    Zhenlei Shen - Boise ID, US
    William H. Radke - Los Gatos CA, US
    Peter Feeley - Boise ID, US
  • Assignee:
    MICRON TECHNOLOGY, INC. - Boise ID
  • International Classification:
    G11C 16/06
    G11C 16/04
  • US Classification:
    36518509, 3651852, 36518521, 36518524
  • Abstract:
    The present disclosure includes methods, devices, and systems for dealing with threshold voltage change in memory devices. A number of embodiments include an array of memory cells and control circuitry having sense circuitry coupled to the array. The control circuitry is configured to determine changes in threshold voltages (Vts) associated with the memory cells without using a reference cell, and adjust the sense circuitry based on the determined changes and without using a reference cell.

  • Data Modulation For Groups Of Memory Cells

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  • US Patent:
    20120307559, Dec 6, 2012
  • Filed:
    Jun 3, 2011
  • Appl. No.:
    13/152637
  • Inventors:
    Zhenlei Shen - Boise ID, US
    William H. Radke - Los Gatos CA, US
  • Assignee:
    MICRON TECHNOLOGY, INC. - Boise ID
  • International Classification:
    G11C 16/10
  • US Classification:
    36518503
  • Abstract:
    Methods, devices, and systems for data modulation for groups of memory cells. Data modulation for groups of memory cells can include modulating N units of data to a combination of programmed states. Each memory cell of a group of G number of memory cells can be programmed to one of M number of programmed states, where M is greater than a minimum number of programmed states needed to store N/G units of data in one memory cell, and where the programmed state of each memory cell of the group is one of the combination of programmed states.

  • Memory Cell Coupling Compensation

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  • US Patent:
    20130051143, Feb 28, 2013
  • Filed:
    Aug 23, 2011
  • Appl. No.:
    13/215348
  • Inventors:
    Zhenlei Shen - Boise ID, US
    William H. Radke - Los Gatos CA, US
    Peter Feeley - Boise ID, US
  • Assignee:
    MICRON TECHNOLOGY, INC. - Boise ID
  • International Classification:
    G11C 16/06
    G11C 16/04
  • US Classification:
    36518509, 36518518
  • Abstract:
    Methods for memory cell coupling compensation and apparatuses configured to perform the same are described. One or more methods for memory cell coupling compensation includes determining a state of a memory cell using a voltage that is changed in accordance with a first memory cell coupling compensation voltage, performing an error check on the state of the memory cell, and determining the state of the memory cell using a voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing.

  • Methods, Devices, And Systems For Adjusting Sensing Voltages In Devices

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  • US Patent:
    20130141985, Jun 6, 2013
  • Filed:
    Jan 22, 2013
  • Appl. No.:
    13/746689
  • Inventors:
    MICRON TECHNOLOGY, INC. - Boise ID, US
    Zhenlei Shen - Boise ID, US
    Peter Feeley - Boise ID, US
  • Assignee:
    MICRON TECHNOLOGY, INC. - Boise ID
  • International Classification:
    G11C 16/26
  • US Classification:
    36518521
  • Abstract:
    The present disclosure includes methods, devices, and systems for adjusting sensing voltages in devices. One or more embodiments include memory cells, and a controller configured to perform a sense operation on the memory cells using a sensing voltage to determine a quantity of the memory cells having a threshold voltage (Vt) greater than the sensing voltage and adjust a sensing voltage used to determine a state of the memory cells based, at least partially, on the determined quantity of memory cells.

  • Methods And Apparatuses For Determining Threshold Voltage Shift

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  • US Patent:
    20130163346, Jun 27, 2013
  • Filed:
    Dec 22, 2011
  • Appl. No.:
    13/335309
  • Inventors:
    Zhenlei Shen - Boise ID, US
  • Assignee:
    MICRON TECHNOLOGY, INC. - Boise ID
  • International Classification:
    G11C 16/04
  • US Classification:
    36518524
  • Abstract:
    Apparatuses and methods for determining threshold voltage shift are described. A number of methods for determining threshold voltage shift in memory cells include determining changes in threshold voltage for memory cells at each data state of a first number of data states by searching threshold voltage data of memory cells programmed to the first number of data states and determining changes in threshold voltage for memory cells at each data state of a second number of data states by searching threshold voltage data of memory cells programmed to the second number of data states within a range of threshold voltages, wherein the range is shifted from a previous range based on the changes in threshold voltage for memory cells programmed to the first number of data states.
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