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Zhonghua Te Dong

age ~58

from Tracy, CA

Also known as:
  • Zhong Hua Dong
  • Zhong Ua Dong
  • Zhong H Dong
  • Zhong-Hua H Dong
  • Honghua Dong
  • Tong Zheng

Zhonghua Dong Phones & Addresses

  • Tracy, CA
  • Sunnyvale, CA
  • Stateline, NV
  • Merced, CA
  • San Jose, CA
  • Milpitas, CA
  • San Joaquin, CA
  • 1079 W Remington Dr, Sunnyvale, CA 94087 • (408)7372639

Education

  • Degree:
    High school graduate or higher

Emails

z***g@qwest.net

Us Patents

  • Charged Particle System For Reticle/Wafer Defects Inspection And Review

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  • US Patent:
    8519333, Aug 27, 2013
  • Filed:
    May 3, 2012
  • Appl. No.:
    13/463208
  • Inventors:
    Chiyan Kuan - Danville CA, US
    Yi-Xiang Wang - Fremont CA, US
    Chung-Shih Pan - Palo Alto CA, US
    Zhonghua Dong - Sunnyvale CA, US
    Zhongwei Chen - San Jose CA, US
  • Assignee:
    Hermes Microvision Inc. - Hsinchu
  • International Classification:
    H01J 37/20
    H01J 37/26
    G01N 23/225
    G01N 23/22
  • US Classification:
    250310, 250306, 250607, 250311
  • Abstract:
    The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system.
  • System And Method To Determine Focus Parameters During An Electron Beam Inspection

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  • US Patent:
    20090108199, Apr 30, 2009
  • Filed:
    Nov 13, 2007
  • Appl. No.:
    11/939530
  • Inventors:
    Xuedong LIU - Cupertino CA, US
    Zhonghua DONG - Sunnyvale CA, US
    Wei FANG - Milpitas CA, US
    Zhong-Wei CHEN - San Jose CA, US
  • Assignee:
    Hermes Microvision, Inc. (TAIWAN) - Hsin-chu
  • International Classification:
    H01J 3/14
    H01J 37/21
  • US Classification:
    250310
  • Abstract:
    This invention relates to apparatus and method to fast determine focus parameters in one pre-scan during an e-beam inspection practice. More specifically, embodiments of the present invention provide an apparatus and method that provide accurate focus tuning after primary focusing has been done.
  • Field Programmable Detector Array

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  • US Patent:
    20220415608, Dec 29, 2022
  • Filed:
    Jul 1, 2022
  • Appl. No.:
    17/856848
  • Inventors:
    - Veldhoven, NL
    Zhonghua DONG - Sunnyvale CA, US
    Rui-Ling LAI - Chang-Hua, TW
  • Assignee:
    ASML NETHERLANDS B.V. - Veldhoven
  • International Classification:
    H01J 37/244
    H01L 27/146
  • Abstract:
    Systems and methods for implementing a detector array are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first element and a second element, and a switching region therebetween configured to connect the first element and the second element. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy.
  • Method And Apparatus For Charged Particle Detection

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  • US Patent:
    20220375716, Nov 24, 2022
  • Filed:
    Apr 4, 2022
  • Appl. No.:
    17/713189
  • Inventors:
    - Veldhoven, NL
    Weiming REN - San Jose CA, US
    Zhonghua DONG - Sunnyvale CA, US
    Zhongwei CHEN - San Jose CA, US
  • Assignee:
    ASML Netherlands B.V. - Veldhoven
  • International Classification:
    H01J 37/244
    H01J 37/28
    G01N 23/2251
  • Abstract:
    Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.
  • Cross-Talk Cancellation In Multiple Charged-Particle Beam Inspection

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  • US Patent:
    20220301811, Sep 22, 2022
  • Filed:
    Aug 20, 2020
  • Appl. No.:
    17/633176
  • Inventors:
    - Veldhoven, NL
    Lingling PU - San Jose CA, US
    Bo WANG - Cupertino CA, US
    Zhonghua DONG - Sunnyvale CA, US
    Yongxin WANG - San Ramon CA, US
  • International Classification:
    H01J 37/22
    H01J 37/244
    H01J 37/28
    G01N 23/2251
    G06T 5/00
    G06T 5/50
  • Abstract:
    An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.
  • System And Method For High Throughput Defect Inspection In A Charged Particle System

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  • US Patent:
    20230116381, Apr 13, 2023
  • Filed:
    Mar 9, 2021
  • Appl. No.:
    17/911121
  • Inventors:
    - Veldhoven, NL
    Zhonghua DONG - San Jose CA, US
    Te-Yu CHEN - San Jose CA, US
  • Assignee:
    ASML Netherlands B.V. - Veldhoven
  • International Classification:
    H01J 37/20
    H01J 37/28
    H01J 37/147
  • Abstract:
    Apparatuses, systems, and methods for generating a beam for inspecting a wafer positioned on a stage in a charged particle beam system are disclosed. In some embodiments, a controller may include circuitry configured to classify a plurality of regions along a stripe of the wafer by type of region, the stripe being larger than a field of view of the beam, wherein the classification of the plurality of regions includes a first type of region and a second type of region; and scan the wafer by controlling a speed of the stage based on the type of region, wherein the first type of region is scanned at a first speed and the second type of region is scanned at a second speed.
  • Switch Matrix Design For Beam Image System

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  • US Patent:
    20230005707, Jan 5, 2023
  • Filed:
    Sep 13, 2022
  • Appl. No.:
    17/944121
  • Inventors:
    - Veldhoven, NL
    Zhonghua DONG - Sunnyvale CA, US
    Rui-Ling LAI - Chang-Hua, TW
  • Assignee:
    ASML Netherlands B.V. - Veldhoven
  • International Classification:
    H01J 37/244
    H01L 27/146
  • Abstract:
    Systems and methods for implementing a detector array are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first element and a second element. The detector comprises a switching element configured to connect the first element and the second element. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy.
  • Architecture For Large Active Area High Speed Detector

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  • US Patent:
    20210134557, May 6, 2021
  • Filed:
    Mar 14, 2019
  • Appl. No.:
    17/044840
  • Inventors:
    - Veldhoven, NL
    Zhonghua DONG - Sunnyvale CA, US
  • International Classification:
    H01J 37/244
    H01L 27/146
  • Abstract:
    Detectors and detection systems are disclosed. According to certain embodiments, a substrate comprises a plurality of sensing elements including a first plurality of the sensing elements and a second plurality of the sensing elements, and a plurality of sections configured to connect the first plurality to an output, and connect the second plurality to an output. Switching regions may be provided between the sensing elements that are configured to connect two or more sensing elements. The switching region may be controlled based on signals generated in response to the sensing elements receiving electrons with a predetermined amount of energy and/or beam intensity.

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