Charles L Varker

US Patent:

59623896, Oct 5, 1999

Filed:

Mar 15, 1996

Appl. No.:

8/616731

Inventors:

Terrell L. Partee - Scottsdale AZ
Charles Varker - Phoenix AZ
Elaine T. Morse - Mesa AZ
Ronald D. Morgan - Gilbert AZ

Assignee:

The Dial Corporation - Phoenix AZ

International Classification:

C11D 310
C11D 337
C11D 1100

US Classification:

510276

Abstract:

A carbonate-based detergent having improved properties is provided. Preferably, a base detergent includes an alkali metal carbonate builder, an anionic surfactant, an inert diluent, a copolymer, and a chlorine scavenger. The base detergent may be mixed with an agglomerate including nonionic surfactants and a builder such as an alkali metal carbonate. The detergent has improved color retention properties. A method of preparing the improved detergent composition is also provided.

US Patent:

42006210, Apr 29, 1980

Filed:

Jul 18, 1978

Appl. No.:

5/925733

Inventors:

H. Ming Liaw - Scottsdale AZ
Charles J. Varker - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

C01B 3302

US Classification:

423348

Abstract:

A combined method for purifying silicon and growing single crystals. A multiple step process is disclosed by which metallurgical grade silicon is purified and converted into a high quality monocrystalline silicon ingot. Each of the steps in the process is designed to remove specific impurities and thus improve the electrical quality of the silicon material. First, the insoluble slag and high segregation coefficient impurities are removed. Soluble impurities are then removed by a reactive gas step, and by a liquid-liquid extraction step using reactive metallic oxides or an oxide solvent. The remaining impurities are removed by segregation during freezing by pulling an ingot from a portion of the molten metallurgical grade silicon. The ingot so formed is then used to charge a second crystal puller. One or more of the previous purifying steps can then be repeated for the charge of the second crystal puller and an ingot of improved purity can be pulled from the melt of the second puller.

US Patent:

H5690, Jan 3, 1989

Filed:

Dec 4, 1986

Appl. No.:

6/938355

Inventors:

Charles J. Varker - Scottsdale AZ
Syd R. Wilson - Phoenix AZ

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

H01L 29167

US Classification:

357 64

Abstract:

A means and method is described for shielding semiconductor charge storage devices from the effects of particles or ionizing radiation absorbed within the bulk of the semiconductor substrate, by providing a free carrier shield consisting of a buried layer of very low lifetime in the undisturbed material below the depletion regions associated with the charge storage devices. The very low lifetime layer is obtained by ion implantation of a super-saturated zone of impurities such as oxygen which provide deep recombination centers and which react chemically with the substrate material so as to provide thermally stable complexes which do not anneal away during post implant heating cycles. Concentrations of lifetime killing impurities significantly exceeding the solid solubility limit are achieved so that the lifetime reduction in the carrier shield region greatly exceeds that obtainable by prior art methods. Partial shielding is also provided against carriers injected by nearby junctions or introduced by charge pumping during circuit operation.

US Patent:

46824073, Jul 28, 1987

Filed:

Jan 21, 1986

Appl. No.:

6/821095

Inventors:

Syd R. Wilson - Phoenix AZ
Richard B. Gregory - Phoenix AZ
Charles J. Varker - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2904
H01L 21425
H01L 21265

US Classification:

29576B

Abstract:

Implantation of oxygen or nitrogen in polysilicon layers to a dose above about 10. sup. 15 ions/cm. sup. 2 retards rapid grain boundary migration of conventional dopants such as B, P, As, Sb, and the like during dopant activation. Pre-annealing of the poly films to increase the grain size also decreases rapid grain boundary migration. The efffects can be combined by first pre-annealing and then implanting oxygen or nitrogen before introducing the dopant. It is desirable to anneal the oxygen implant before introducing the dopant to allow for oxygen diffusion to the grain surfaces where is precipitates and blocks the grain boundaries. Vertical and lateral migration of the dopants can be inhibited by placing the implanted oxygen or nitrogen between the dopant and the location desired to be kept comparatively free of dopants. When very high dopant activation temperatures are used the blocking effect of the oxygen on the grain boundaries is overwhelmed by dopant diffusion through the grains.

US Patent:

47175885, Jan 5, 1988

Filed:

Dec 23, 1985

Appl. No.:

6/812557

Inventors:

Syd R. Wilson - Phoenix AZ
Wayne M. Paulson - Paradise Valley AZ
Charles J. Varker - Scottsdale AZ

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

B05D 314

US Classification:

427 51

Abstract:

A method for diffusing a metal dopant into a semiconductor switching device is provided by the use of a rapid thermal heating apparatus. This method provides a procedure for the selectively placing of a metal dopant in a region of the device or circuit. This aids in increasing the manufacturing yields of the switching device, and increases the number of active traps for minority carriers.

US Patent:

61627801, Dec 19, 2000

Filed:

Aug 9, 1999

Appl. No.:

9/370468

Inventors:

Terrell L. Partee - Scottsdale AZ
Charles Varker - Phoenix AZ
Elaine T. Morse - Mesa AZ
Ronald D. Morgan - Gilbert AZ

Assignee:

The Dial Corporation - Scottsdale AZ

International Classification:

C11D 310
C11D 337
C11D 1100

US Classification:

510276

Abstract:

A carbonate-based detergent having improved properties is provided. Preferably, a base detergent includes an alkali metal carbonate builder, an anionic surfactant, an inert diluent, a copolymer, and a chlorine scavenger. The base detergent is mixed with an agglomerate including nonionic surfactants and a builder such as an alkali metal carbonate. The detergent has improved color retention properties. A method of preparing the improved detergent composition is also provided.

US Patent:

47558652, Jul 5, 1988

Filed:

Apr 9, 1987

Appl. No.:

7/036232

Inventors:

Richard B. Gregory - Phoenix AZ
Charles J. Varker - Scottsdale AZ

Assignee:

Motorola Inc. - Schaumberg IL

International Classification:

H01L 2978
H01L 29167
H01L 2904

US Classification:

357 63

Abstract:

Implantation of oxygen or nitrogen in polysilicon layers to a dose above about 10. sup. 15 ions/cm. sup. 2 retards rapid grain boundary migration of conventional dopants such as B, P, As, Sb, and the like during dopant activation. Pre-annealing of the poly films to increase the grain size also decreases rapid grain boundary migration. The effects can be combined by first pre-annealing and then implanting oxygen or nitrogen before introducing the dopant. It is desirable to anneal the oxygen implant before introducing the dopant to allow for oxygen diffusion to the grain surfaces where it precipitates and blocks the grain boundaries. Vertical and lateral migration of the dopants can be inhibited by placing the implanted oxygen or nitrogen between the dopant and the location desired to be kept comparatively free of dopants. When very high dopant activation temperatures are used the blocking effect of the oxygen on the grain boundaries is overwhelmed by dopant diffusion through the grains.

US Patent:

54729114, Dec 5, 1995

Filed:

Sep 2, 1994

Appl. No.:

8/300818

Inventors:

Michael L. Dreyer - Scottsdale AZ
Charles J. Varker - Scottsdale AZ
Ganesh Rajagopalan - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21441

US Classification:

437187

Abstract:

A method and an electrically conductive interconnect structure (30) for controlling electromigration. The electrically conductive interconnect structure (30) comprises a groove (33) adjacent an electrically conductive interconnect (39). The electrically conductive interconnect (39) is patterned from a deposited layer of conductive material which contains global grain microstructures. Moreover, the electrically conductive interconnect (39) is patterned to have polycrystalline and single-grain segment lengths that are less than a length at which an electromigration flux fails to overcome a gradient-driven counter flux in a line segment. The groove (33) controls the polycrystalline and single-grain segment lengths to be less than the critical length, thereby reducing electromigration.